檢測認證人脈交流通訊錄
- 維爾克斯光電提供磁光測量儀器 磁光克爾效應測量儀 NEOARK代理。維爾克斯光電專業代理NEOARK磁光測量系統，磁光克爾效應測量儀，Magneto-Optical Product。磁光測量主要包括磁光克爾效應測量（μ-Kerr Effect）、磁滯回線測量和法拉第效應測量。 日本NEOARK公司成立于1976年，是一家專業從事精密儀器儀表、激光器的高科技公司，在磁光測試領域擁有雄厚的技術實力。Neoark公司 產品產品范圍包括：激光光源，激光測量（激光掃描儀、激光光譜分析儀、功率計、激光探測器），激光打標，位移測量儀，振動儀，激光微處理器，激光直接光刻系統，磁光/偏振特性測量等。其中以碘穩頻激光器和磁光測量儀器最為出名。維爾克斯光電專業代理NEOARK磁光測量儀器在中國市場的銷售。 磁光效應測量系統 Magneto-Optical Effect Measurement System 維爾克斯光電提供磁光測量儀器 磁光克爾效應測量儀 NEOARK代理 關鍵詞：磁光克爾效應 磁滯回線測量： 極性克爾效應（垂直磁化） 縱向克爾效應（平面磁化） 克爾效應測量顯微鏡 低溫 法拉第效應測量 垂直磁各向異性分析（磁場應用的角度依賴性） 在平面磁各向異性分析（磁場應用的角度依賴性） 在平面的傾斜角度評價 磁域觀測顯微鏡（Kerr顯微鏡，磁光克爾效應顯微鏡） 應用：顯微鏡磁域觀察 極克爾效應（垂直磁化） 縱向克爾效應（平面磁化） 低溫 磁光效應測量系統 關鍵詞：磁滯回線測量 晶圓 磁記憶 硬盤磁頭 磁傳感器 硬盤 垂直磁記錄介質 軟襯層（SUL） 頭裝置 熱輔助磁記錄（HAMR）硬盤媒體 μ-Kerr Effect Measurement And Magnetic Domain Observation System BH-PI7892 Series μ-Kerr Effect Measurement System BH-PI920 Series Features Microscopic Local Magnetic Property Analysis based on both Polar and Longitudinal Kerr Effect(Not simultaneous measurement) Suitable for sensitive analysis of μm size magnetic pattern and magnetic thin film Specification Measurement Subject: Magneto-Optical Kerr Effect (Polar and Longitudinal Kerr Effect) Main Function: Kerr Loop Measurement Light Source: Diode Laser Probe Light Spot: φ2-5μm Generating Magnetic Field: Max. ±10kOe (1T) *Option: In-Plane Electromagnet μ-Kerr Effect Measurement and Magnetic Domain Observation System BH-PI7892 Series μ-Kerr Effect Measurement and Magnetic Domain Observation System BH-PI7892 Series Longitudinal Kerr Effect Measurement System BH-618 Series Faraday Effect Measurement System BH-620 Series Perpendicular Magnetic Anisotropy Analysis Features Magneto-Optical Kerr Effect with motorized rotating Electromagnet for Magnetic Field Applied Angle Dependence Analysis In-Plane Magnetic Anisotropy & Skew Angle Analysis *Magnetic Field Application Angle Dependence Analysis (Magnetic Field Application Direction: In-Plane Direction) “For Wafer” Perpendicular Magnetic Layer Evaluation System Model: BH-810CPC25WF12 Features Specially Designed for evaluation of Perpendicular Magnetic Layer of 12 Inch Wafer Specification Main Function: Kerr Loop Measurement and Mapping Measurement (Polar Kerr Effect) Light Source: Diode Laser Probe Light Spot Size: φ1mm (Typ.) Generating Magnetic Field: Max. ± 25Oe (2.5T) “For Wafer” In-Plane Magnetic Layer Evaluation System Model: BH-618SK-12 “For Hard Disc” Perpendicular Magnetic Recording Layer Evaluation System Model: BH-810CPC “For Hard Disc” Soft Under Layer (SUL) Evaluation System Model: BH-618HS Features: Specially Designed for evaluation of Soft Under Layer (SUL) of both 2.5 inch and 3.5 Inch Hard Disk Magnetic Domain Observation Microscope BH-786 Series Features Magnetic Domain Observation Microscope (Kerr Microscope) with various optional magnification and magnetic field Specification Observation Subject: Magneto-Optical Kerr Effect (Polar and Longitudinal Kerr Effect) Main Function: CCD Camera Observation and Image Capturing Light Source: Mercury Lamp Observation Resolution: 1μm (Typ.) with x50 Objective Lens Observation Area: 100 x 70μm with x50 Objective Lens Generating Magnetic Field: > ± 10kOe (1T) *Option: In-Plane Electromagnet and Others Low Temperature Magnetic Domain Observation Microscope BH-7850 Series
